CMPA901A035F Datasheet PDF - WOLFSPEED, INC.

Description
   The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms.

FEATUREs
• 35 W Typical PSAT
• >33% Typical Power Added Efficiency
• 22.5 dB Large Signal Gain
• High Temperature Operation

APPLICATIONs
• Military Radar
• Marine Radar
• Weather Radar
• Medical Applications