CNW83 Datasheet PDF - QT Optoelectronics => Fairchildsemi

DESCRIPTION
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

FEATURES
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)