CP302 Datasheet PDF - Central Semiconductor Corp
Part Name
CP302
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MFG CO.
Central Semiconductor Corp
PROCESS DETAILS
Process EPITAXIAL PLANAR)
Die Size 14.5 x 14.5 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 2.3 x 2.3 MILS
Emitter Bonding Pad Area 2.5 x 2.3 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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