CPC5602C Datasheet PDF - IXYS CORPORATION

Description
The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications, security, and power supplies.

FEATUREs
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
• Low On-resistance: 8Ω (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings

APPLICATIONs
• Support Component for LITELINK™ Data Access Arrangement (DAA)
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies