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CRF24060D Datasheet PDF - Cree, Inc

CRF24060D image

Part Name
CRF24060D

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page
8 Pages

File Size
709.1 kB

MFG CO.
Cree
Cree, Inc Cree

60 W SiC RF Power MESFET Die

Cree’s CRF24060 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater power density and wider bandwidths compared to Si and GaAs transistors.


FEATURES
• 13 dB Small Signal Gain at 1.5 GHz
• 60 W Typical P1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 5 GHz Operation
• High Efficiency


APPLICATIONS
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA and W-CDMA
• Broadband Amplifiers
• MMDS


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