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DBES105A Datasheet PDF - United Monolithic Semiconductors

DBES105A image

Part Name
DBES105A

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page
4 Pages

File Size
67.8 kB

MFG CO.
UMS
United Monolithic Semiconductors UMS

Description
The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
This flip-chip dual diode has been designed for high performance mixer applications.
   
Main Features
■ High cut-off frequencies: 3THz
■ High breakdown voltage: < -5V@ 20µA
■ Good ideality factor: 1.2
■ Low parasitic inductances
■ Low cost technology
■ Dimensions : 0.53 x 0.23 x 0.1mm
   


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