DGSS20-05C Datasheet PDF - IXYS CORPORATION

Gallium Arsenide Schottky Diode ISOPLUS220™ Electrically Isolated Back Surface

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
• Low forward voltage
• Very high switching speeds
• Soft reverse recovery
• Temperature independent switching behaviour
• High temperature operation capability
• Low cathode to tab capacitance (<15pF)
• Epoxy meets UL 94V-0

APPLICATIONs
• Switched mode power supplies (SMPS)
• High frequency converters
• Resonant converters