DMTH10H025LPSQ Datasheet PDF - Shanghai Leiditech Electronic Technology Co., Ltd

N-ChannelEnhancement Mode Field Effect Transistor

DMTH10H025LPSQ use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in

FEATUREs
   Low RDS(on) & FOM
   Extremely low switching loss
   Excellent stability and uniformity or Invertors

APPLICATIONs
   Consumer electronic power supply
   Motor control
   Synchronous-rectification
   Isolated DC
   Synchronous-rectification application