DS1330BL-70-IND Datasheet PDF - Dallas Semiconductor -> Maxim Integrated

DESCRIPTION
The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

FEATURES
• Built–in lithium battery provides more than 10 years of data retention
• Data is automatically protected during VCC power loss
• Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp–up
• Battery monitor checks remaining capacity daily
• Read and write access times as fast as 70 ns
• Unlimited write cycle endurance
• Typical standby current 50 µA
• Upgrade for 32K x 8 SRAM, EEPROM or Flash devices
• Lithium battery is electrically disconnected to retain freshness until power is applied for the first time
• Full ±10% VCC operating range (DS1330YL) or optional ±5% VCC operating range (DS1330BL)
• Low Profile Module package fits into standard 68–pin surface mountable PLCC sockets
• Optional industrial temperature range of –40°C to +85°C, designated IND