DSEE29-06CC Datasheet PDF - IXYS CORPORATION

HiPerDynFRED™ Epitaxial Diode ISOPLUS220™  Electrically Isolated Back Surface

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
• Low cathode to tab capacitance (<15pF)
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0

APPLICATIONs
• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters and motor control circuits
• Rectifiers in switch mode power supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders

Advantages
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
    - Power dissipation within the diode
    - Turn-on loss in the commutating switch