DSEE8-06CC Datasheet PDF - IXYS CORPORATION

IFAV = 10 A
VRRM = 600 V
trr = 30 ns

FEATUREs
● Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
● Low cathode to tab capacitance (<15pF)
● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low IRM-values
● Soft recovery behaviour
● Epoxy meets UL 94V-0

APPLICATIONs
● Antiparallel diode for high frequency switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters and motor control circuits
● Rectifiers in switch mode power supplies (SMPS)
● Inductive heating
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders