EN25B10-75VC Datasheet PDF - Eon Silicon Solution Inc.

GENERAL DESCRIPTION
The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES
• Single power supply operation
    - Full voltage range: 2.7-3.6 volt
• 1 M-bit Serial Flash
    - 1 M-bit/128 K-byte/512 pages
    - 256 bytes per programmable page
• High performance
    - 75MHz clock rate
• Low power consumption
    - 5 mA typical active current
    - 1 μA typical power down current
• Flexible Sector Architecture:
    - Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors
• Software and Hardware Write Protection:
    - Write Protect all or portion of memory via software
    - Enable/Disable protection with WP# pin
• High performance program/erase speed
    - Byte program time: 7µs typical
    - Page program time: 1.5ms typical
    - Sector erase time: 300 to 500ms typical
    - Chip erase time: 2 Seconds typical
• Minimum 100K endurance cycle
• Package Options
    - 8 pins SOP 150mil body width
    - 8 contact VDFN
• Commercial and industrial temperature Range