EN25B40T-50VC Datasheet PDF - Eon Silicon Solution Inc.

GENERAL DESCRIPTION
The EN25B40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 4 M-bit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
•High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and seven 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 5 Seconds typical
• Minimum 100K endurance cycle
•Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
•Commercial and industrial temperature Range