EN29F002B-70J Datasheet PDF - Eon Silicon Solution Inc.

GENERAL DESCRIPTION
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 / EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• 5.0V ± 10% for both read/write operation
• Read Access Time
- 45ns, 55ns, 70ns, and 90ns
• Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
• Sector Architecture:
One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
• Boot Block Top/Bottom Programming Architecture
• High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical 
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current 
• Low Power Active Current
- 30mA active read current
- 30mA program / erase current
• JEDEC Standard program and erase commands