EPC2001C Datasheet PDF - ETC

[Efficient Power Conversion Corporation.]

Enhancement Mode Power Transistor

VDS , 100 V
RDS(on) , 7 mΩ
ID , 36 A

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

EPC2001C eGaN® FETs are supplied only in passivated die form with solder bars

APPLICATIONs
• High-Frequency DC-DC Conversion
• Industrial Automation
• Synchronous Rectification
• Class-D Audio
• Low Inductance Motor Drives

Benefits
• Ultra High Efficiency
• Ultra Low Switching and Conduction Losses
• Zero QRR
• Ultra Small Footprint