EPC2014C Datasheet PDF - ETC

[Efficient Power Conversion Corporation.]

Enhancement Mode Power Transistor

VDS , 40 V
RDS(on) , 16 mΩ
ID , 10 A

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

EPC2014C eGaN® FETs are supplied only in passivated die form with solder bumps

APPLICATIONs
• High Frequency DC-DC conversion
• Class-D Audio
• Wireless Power Transfer
• Lidar

Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint