EPC2021 Datasheet PDF - Espros Photonics corp

Enhancement Mode Power Transistor

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

EPC2021 eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 6.05 mm x 2.3 mm

• High Speed DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Class-D Audio