EPC2021 Datasheet PDF - Efficient Power Conversion Corporation.

80 V (D-S) Enhancement Mode Power Transistor

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. 

Benefits
• Ultra High Efficiency
• No Reverse Recovery
• Ultra Low QG
• Small Footprint

APPLICATIONs
• High Frequency DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Class-D Audio