General Description
This P-Channel MOSFET has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
FEATUREs
● VDS (V) = -30V
● RDS(ON) 26 mΩ (V GS = -4.5V)
● RDS(ON) 34 mΩ (V GS = -2.5V)
● Fast switching speed
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability