FDD8896 Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

Description
   This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FEATUREs
   VDS (V) = 30V
   ID = 35A (VGS = 10V)
   RDS(ON) =5.7mΩ (VGS = 10V)
   RDS(ON) =6.8mΩ (VGS = 4.5V)