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FDN302P Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

FDN302P image

Part Name
FDN302P

Other PDF
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page
5 Pages

File Size
288.2 kB

MFG CO.
EVVOSEMI
VER SEMICONDUCTOR CO.,LIMITED EVVOSEMI

General Description
   This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).


FEATUREs
• –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V
                          RDS(ON) = 80 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
   low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
   power handling capability than SOT23 in the same
   footprint


APPLICATIONs
• Power management
• Load switch
• Battery protection


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