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FDN358P Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

FDN358 image

Part Name
FDN358P

Other PDF
  no available.

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page
5 Pages

File Size
315.5 kB

MFG CO.
EVVOSEMI
VER SEMICONDUCTOR CO.,LIMITED EVVOSEMI

General Description
   These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.


FEATUREs
● VDS (V) = -30V
● ID = -1.5 A
● RDS(ON) < 90mΩ (VGS = -10V)
● RDS(ON) < 150mΩ (VGS = -4.5V)
● Low gate charge (4 nC typical)
● High performance trench technology for extremely
   low R DS(ON) .
● High power version of industry Standard SOT-23
   package. Identical pin-out to SOT-23 with 30%
   higher power handling capability.


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