FDN359BN Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

General Description
   This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
   These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
● VDS (V) = 30V
● RDS(ON) < 46mΩ (VGS = 10V)
● RDS(ON) < 60mΩ (VGS = 4.5V)