FDN360P Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

General Description
   These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
● VDS (V) = -30V
● ID= -2A (VGS=10V)
● RDS(ON) < 80mΩ (VGS = -10V)
● RDS(ON) < 125mΩ (VGS = -4.5V)
● Low gate charge (6.2 nC typical)
● High performance trench technology for extremely low RDS(ON) .
● High power version of industry Standard SOT-23 package.
● higher power handling capability.