FDP4D5N10C Datasheet PDF - ON Semiconductor

General Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

FEATUREs
◾ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A
â—¾ Extremely Low Reverse Recovery Charge, Qrr
â—¾ 100% UIL Tested
â—¾ RoHS Compliant

APPLICATIONs
â—¾ Synchronous Rectification for ATX / Server / Telecom PSU
â—¾ Motor Drives and Uninterruptible Power Supplies
â—¾ Micro Solar Inverter