General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
                     RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
• Low gate charge (13nC typical)
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability in a widely used surface mount package.

APPLICATIONs
• Low Dropout Regulator
• DC/DC converter
• Load switch
• Motor driving