FMBT2222AW-H Datasheet PDF - Formosa Technology

600mA Silicon NPN Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage.
   (BVCEO = 40V@IC =10mA)
• Small load switch transistor with high gain and low
   stauration voltage, is designed for general purpose
   amflifier and switching applications at collector current.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2222AW-H.