FMBT2907 Datasheet PDF - Formosa Technology

600mA General Purpose PNP Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage.
   (BVCEO = -60V@IC=-10mA)
• PNP silicon epitaxial planar transistor, is designed for general
   purpose and amplifier applications.
• As complementary type, the NPN transistor FMBT2222/
   FMBT2222A is recommended.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.