FMBT2907AW Datasheet PDF - Formosa Technology

600mA General Purpose Transistor PNP Silicon

FEATUREs
• High collector-emitter breakdown voltage
   (BVCEO = -60V@IC =-10mA)
• PNP silicon epitaxial planar transistor, is designed for general
   purpose and amplifier applications.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907AW-H.