FMBT3904DW1 Datasheet PDF - Formosa Technology

Dual General Purpose Transistor NPN+NPN Silicon

FEATUREs
• High collector-emitterbreakdien voltage. (BVCEO = 40V@I =1mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.