FMBT3906-H(2011) Datasheet PDF - Formosa Technology

200mA Silicon PNP Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage. (BVCEO -40V Min.@IC =-1.0mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• As complementary type, the NPN transistor FMBT3904 is recommended
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" dinicates Halogen-free part, ex.FMBT3906-H.