FMBT3906DW1 Datasheet PDF - Formosa Technology

200mA Silicon PNP Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=-1.0mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Offer PNP+ PNP in one package recommended
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H