FMBT5551 Datasheet PDF - Formosa Technology

600mA Silicon NPN Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage.
   (BVCEO = 140V~ 160V@IC=1mA)
• This device is designed for general purpose high voltage
   amplifiers and gas discharge display driving
• Epitaxial planar die construction
• Complememntary PNP type available (FMBT5401)
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H.