FQA26N30 Datasheet PDF - Fairchild Semiconductor

General Description
   These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.

FEATUREs
• 25.5A, 300V, RDS(on) = 0.1352 @VGS = 10 V
• Low gate charge (typical 60 nC)
• Low Crss (typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability