FQD13N10LTM Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

Description
   This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

FEATUREs
   VDS (V) = 100V
   ID = 10A (VGS = 10V)
   RDS(ON) <180mΩ (VGS = 10V),ID = 5.0 A