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FQP65N06 Datasheet PDF - Thinki Semiconductor Co., Ltd.

FQP65N06 image

Part Name
FQP65N06

Other PDF
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page
6 Pages

File Size
971.1 kB

MFG CO.
THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI

General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.


FEATUREs
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


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