FQP8N80C Datasheet PDF - Thinki Semiconductor Co., Ltd.

General Description
   planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. This Power MOSFET is produced using ThinkiSemis advanced

FEATUREs
◾  Low RDS(on) (1.55 Ω )@VGS=10V
◾ Low Gate Charge (Typical 27nC)
◾ Low Crss (Typical 10pF)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested
◾ Maximum Junction Temperature Range (175°C)