FQP9N90C Datasheet PDF - Thinki Semiconductor Co., Ltd.

General Description
This Power MOSFET is produced using ThinkiSemis advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.

FEATUREs
■ Low RDS(on) (1.40 Ω )@VGS=10V,ID=4A
■ Low Gate Charge (Typical 45nC)
■ Low Crss (Typical 14pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)