GAP3SHT33-CAL Datasheet PDF - GeneSiC Semiconductor, Inc.

Features
• 3300 V Schottky rectifier
• 175 °C maximum operating temperature
• Electrically isolated base-plate
• Positive temperature coefficient of VF
• Fast switching speeds
• Superior figure of merit QC/IF

Advantages
• Improved circuit efficiency (Lower overall cost)
• Significantly reduced switching losses compare to Si PiN
   diodes
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Low reverse recovery current
• Low device capacitance

APPLICATIONs
• Down Hole Oil Drilling, Geothermal Instrumentation
• High Voltage Multipliers
• Military Power Supplies