H11AA814A Datasheet PDF - QT Optoelectronics => Fairchildsemi

DESCRIPTION
The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES
■ Compact 4-pin package
■ Current transfer ratio in selected groups:
   H11AA814: 20-300%      H11A817: 50-600%
   H11AA814A: 50-150%    H11A817A: 80-160%
                                           H11A817B: 130-260%
                                           H11A817C: 200-400%
                                           H11A817D: 300-600%

APPLICATIONS
H11AA814 Series
   ■ AC line monitor
   ■ Unknown polarity DC sensor
   ■ Telephone line interface
H11A817 Series
   ■ Power supply regulators
   ■ Digital logic inputs
   ■ Microprocessor inputs
   ■ Industrial controls