H11AG1M(2015) Datasheet PDF - Fairchild Semiconductor

Description
The H11AG1M device consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low-power logic circuits, tele communications equipment and portable electronics isolation applications.

FEATUREs
■ High-Efficiency Low-Degradation Liquid Epitaxial
   IRED
■ Logic Level Compatible, Input and Output Currents,
   with CMOS and LS/TTL
■ High DC Current Transfer Ratio at Low Input Currents
   (as low as 200 µA)
■ Safety and Regulatory Approvals:
   – UL1577, 4,170 VACRMS for 1 Minute
   – DIN-EN/IEC60747-5-5, 850 V Peak Working
      Insulation Voltage
     
Applications
■ CMOS Driven Solid State Reliability
■ Telephone Ring Detector
■ Digital Logic Isolation