DESCRIPTION
The H11G1 and H11G2 are the photodarlington-type optically coupled optocouplers. Both devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
FEATURES
■ High BVCEO
Minimum 100 V for H11G1
Minimum 80 V for H11G2
■ High sensitivity to low input current -
Minimum 500 percent CTR at IF = 1 mA
■ Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
■ Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
■ CMOS logic interface
■ Telephone ring detector
■ Low input TTL interface
■ Power supply isolation
■ Replace pulse transformer