H13009 Datasheet PDF - STMicroelectronics

Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds.

FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed

APPLICATIONs
■ Switching mode power supplies