H2N5088 Datasheet PDF - Hi-Sincerity Microelectronics

Description
This device was designed for low noise, high gain , general purpose amplifier applications for 1uA to 25mA collector current.

Absolute Maximum Ratings
• Maximum Temperatures
   Storage Temperature ............................................................................................ -55 ~ +150 °C
   Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
   Total Power Dissipation (Ta=25°C) ............................................................................... 350 mW
• Maximum Voltages and Currents (Ta=25°C)
   VCBO Collector to Base Voltage ........................................................................................ 35 V
   VCEO Collector to Emitter Voltage ..................................................................................... 30 V
   VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
   IC Collector Current......................................................................................................... 50 mA