HFP4N60F(2015) Datasheet PDF - Semihow

FEATURES
❐ Originative New Design
❐ Superior Avalanche Rugged Technology
❐ Robust Gate Oxide Technology
❐ Very Low Intrinsic Capacitances
❐ Excellent Switching Characteristics
❐ Unrivalled Gate Charge : 8.5 nC (Typ.)
❐ Extended Safe Operating Area
❐ Lower RDS(ON) : 2.6 Ω (Typ.) @VGS=10V
❐ 100% Avalanche Tested