HM4264B Datasheet PDF - Shenzhen Huazhimei Semiconductor Co., Ltd

Description
The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 50V,ID =15A
   RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ)
   RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses

APPLICATION
● Power switching application
● Load switch

CASE SOP-8