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I11NM80 Datasheet PDF - STMicroelectronics

STP11NM80 image

Part Name
I11NM80

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page
22 Pages

File Size
902.3 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmeshâ„¢ technology, which associates the multiple drain process with the companys PowerMESHâ„¢ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.


FEATUREs
â–  Low input capacitance and gate charge
â–  Low gate input resistance
â–  Best RDS(on)*Qg in the industry


APPLICATIONs
â–  Switching applications


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