Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmeshâ„¢ technology, which associates the multiple drain process with the companys PowerMESHâ„¢ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
â– Low input capacitance and gate charge
â– Low gate input resistance
â– Best RDS(on)*Qg in the industry
APPLICATIONs
â– Switching applications