IRF730F Datasheet PDF - First Silicon Co., Ltd

DESCRIPTION
➤ IRF730 is 400V High voltage N-Channel enhancement
   mode power MOS-FET chip fabricated in advanced
   silicon epitaxial planar technology;
➤ Advanced termination scheme to provide enhanced voltage-blocking capability;
➤ Avalanche Energy Specified;
➤ Source-to-Drain Diode Recovery Time Comparable to a
   Discrete Fast Recovery Diode;
➤ IRF730 product is widely used in AC-DC power
   suppliers, DC-DC converters and H-bridge PWM motor
   drivers.

FEATURES
* 6.0A, 400V, RDS(ON)=1.0Ω
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Single Pulse Avalanche EnergyRated
* Linear Transfer Characteristics
* High Input Impedance