IRF830 Datasheet PDF - Transys Electronics Limited

Power Field Effect Transistor
N−Channel Enhancement Mode
   
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) to Minimize On−Losses, Specified at Elevated
    Temperature
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use with Inductive Loads