IRF830F Datasheet PDF - First Silicon Co., Ltd

DESCRIPTION
➤ IRF830 is 500V High voltage N-Channel enhancement
   mode power MOS-FET chip fabricated in advanced
   silicon epitaxial planar technology;
➤ Advanced termination scheme to provide enhanced voltageblocking capability;
➤ Avalanche Energy Specified;
➤ Source-to-Drain Diode Recovery Time Comparable to a
   Discrete Fast Recovery Diode;
➤ IRF830 product is widely used in AC-DC power
   suppliers, DC-DC converters and H-bridge PWM motor
   drivers.

FEATURES
* 4.4A, 500V, RDS(ON)=1.5Ω
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Single Pulse Avalanche EnergyRated
* Linear Transfer Characteristics
* High Input Impedance